Non-volatile memory operation in normally-off GaN MOS heterostructure field effect transistors with thin AlGaN barrier

D. Keum, H. Kim, K. Cho
  • Electronics Letters, April 2016, the Institution of Engineering and Technology (the IET)
  • DOI: 10.1049/el.2015.4258

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http://dx.doi.org/10.1049/el.2015.4258

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