What is it about?
Our research focuses on across-layer sliding ferroelectricity in multilayer hBN and hGaN, exploring how controlled sliding can switch out-of-plane polarization with low energy barriers. This could enable new applications in electronic and memory devices.
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Why is it important?
This study reveals energy-efficient ways to control polarization in 2D materials, which is crucial for developing next-generation electronic and memory devices. The low energy barriers make these mechanisms experimentally viable, expanding possibilities for nanoscale engineering.
Perspectives
These findings open new avenues for designing tunable ferroelectric devices using 2D materials. Future research could explore other layered materials and their potential applications in energy-efficient memory and logic devices.
Sanber Vizcaya
Universidad Tecnica Federico Santa Maria
Read the Original
This page is a summary of: Slide and twist: manipulating polarization in multilayer hexagonal boron–nitride, Physical Chemistry Chemical Physics, January 2025, Royal Society of Chemistry,
DOI: 10.1039/d5cp00375j.
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