Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition

M. Bosi, G. Attolini, M. Negri, C. Ferrari, E. Buffagni, C. Frigeri, M. Calicchio, B. Pécz, F. Riesz, I. Cora, Z. Osváth, L. Jiang, G. Borionetti
  • CrystEngComm, January 2016, Royal Society of Chemistry
  • DOI: 10.1039/c6ce00280c

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http://dx.doi.org/10.1039/c6ce00280c

The following have contributed to this page: Dr. Zoltán Osváth