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Doping is used to tune the charge carrier concentration in solids. It is not only at the heart of modern electronics, but also a viable tool for optimizing the performance of various energy-conversion materials. In this study, we have demonstrated a novel doping mechanism, which could lead to better performance compared to conventional doping schemes.

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This page is a summary of: P-type doping of elemental bismuth with indium, gallium and tin: a novel doping mechanism in solids, Energy & Environmental Science, January 2015, Royal Society of Chemistry,
DOI: 10.1039/c5ee01309g.
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