Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system

Shuang Gao, Fei Zeng, Minjuan Wang, Guangyue Wang, Cheng Song, Feng Pan
  • Physical Chemistry Chemical Physics, January 2015, Royal Society of Chemistry
  • DOI: 10.1039/c5cp01235j

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http://dx.doi.org/10.1039/c5cp01235j

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