What is it about?

Organic field-effect transistors (OFETs) have attracted tremendous interest because of solution processability and low-cost device fabrication. Significantly improved mobilities have been achieved by introducing the isoindigo (IIG), one of the most promising acceptor units. Motivated by our previous study concerning the outstanding electron-transport characteristics of poly(isoindigo-alt-benzothiadiazole) (PIIG-BT), we devote our attention to tuning the IIG-BT backbone by inserting heteroaromatic spacers to relieve the steric hindrance between the IIG and BT units, thereby to enhance co-planarity of the backbone.

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Why is it important?

Two new polymers were designed by inserting heteroaromatic spacers into the polymeric backbone and investigated to check their optical, electrochemical properties, and the electrical performance of the OFETs. The presence of the spacers results in relatively well-balanced ambipolar transport, which has scarcely been observed from OFETs based on isoindigo-based semiconducting polymers.

Perspectives

To the best of our knowledge, this is the second example of IIG-based polymers presenting ambipolar characteristics in OFETs reported to date. It is expected that this research will be a good guide for designing new high performance polymer semiconductors.

Hae Rang Lee
Pohang University of Science and Technology

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This page is a summary of: Use of heteroaromatic spacers in isoindigo-benzothiadiazole polymers for ambipolar charge transport, Physical Chemistry Chemical Physics, January 2015, Royal Society of Chemistry,
DOI: 10.1039/c4cp01787k.
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