Molecular precursor derived and solution processed indium–zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition

Rudolf C. Hoffmann, Mareiki Kaloumenos, Silvio Heinschke, Emre Erdem, Peter Jakes, Rüdiger-A. Eichel, Jörg J. Schneider
  • Journal of Materials Chemistry C, January 2013, Royal Society of Chemistry
  • DOI: 10.1039/c3tc00841j

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

http://dx.doi.org/10.1039/c3tc00841j

The following have contributed to this page: Emre Erdem