Inserted metals for low-energy magnetoelectric switching in a Cr2O3/ferromagnet interfacial exchange-biased thin film system

Shujun Ye, Tomohiro Nozaki, Yoshinori Kotani, Kentaro Toyoki, Tetsuya Nakamura, Syougo Yonemura, Tatsuo Shibata, Satya Prakash Pati, Muftah Al-Mahdawi, Yohei Shiokawa, Masashi Sahashi
  • Journal of Materials Chemistry C, January 2018, Royal Society of Chemistry
  • DOI: 10.1039/c7tc05375d

low-energy magnetoelectric switching method for Cr2O3/Co exchange-biased system

What is it about?

magnetoelectric switching in a Cr2O3/ferromagnet interfacial exchange-biased thin film system is a promising device for magnetic random access memory, this work introduces the role of inserted metal for this system, and also paves a way to decrease its writing energy.

Why is it important?

understanding of exchange bias, a way to decrease its writing energy, both are important for magnetic random access memory practical applications.

Perspectives

Shujun Ye (Author)
Tohoku University

According to the method of low writing energy, one may realize its MRAM applications.

The following have contributed to this page: Shujun Ye

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