low-energy magnetoelectric switching method for Cr2O3/Co exchange-biased system
What is it about?
magnetoelectric switching in a Cr2O3/ferromagnet interfacial exchange-biased thin film system is a promising device for magnetic random access memory, this work introduces the role of inserted metal for this system, and also paves a way to decrease its writing energy.
Why is it important?
understanding of exchange bias, a way to decrease its writing energy, both are important for magnetic random access memory practical applications.
The following have contributed to this page: Shujun Ye
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