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The present report demonstrates the potential of a polyarylenes u l f o n i u m p o l y m e r , p o l y [ m e t h y l ( 4 - ( p h e n y l t h i o ) - p h e n y l ) - sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼ 13.5 nm) lithography. PAS exhibited considerable contrast (γ), 0.08, toward EUV and patterned 20 nm features successfully

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This page is a summary of: Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications, ACS Applied Materials & Interfaces, December 2016, American Chemical Society (ACS),
DOI: 10.1021/acsami.6b10384.
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