What is it about?
This paper reports on the ohmic contacts of an radio-frequency micro-electro-mechanical-system (RF MEMS) switch. The most significant performance data are reported, indicating very low actuation voltage, short switching time and good RF performance. Since the contact performance is a key for excellent RF performance in the actuated state and for high reliability as well the article is focused on the contacts.
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Why is it important?
Measurements of the closing process with high time resolution enforce the assumption that asperities are building the current path. The reported findings render prior theoretical experiments with a physical device.
Read the Original
This page is a summary of: Analysis of Au metal–metal contacts in a lateral actuated RF MEMS switch, International Journal of Microwave and Wireless Technologies, July 2014, Cambridge University Press,
DOI: 10.1017/s1759078714000993.
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Resources
A fast and low actuation voltage MEMS switch for mm-wave and its integration
A novel mm-wave MEMS single pole single throw (SPST) switch has been developed, which is driven by 5.0 V in 10.3 μs. The insertion loss and the isolation at 60 GHz were 1.2 dB and 18 dB, respectively.
Reliability enhancement of Ohmic RF MEMS switches
This contribution deals with capacitively actuated Ohmic switches in series single pole single throw (SPST) configuration for DC up to 4 GHz signal frequency (<0.5 dB insertion loss, 35 dB isolation) and in shunt switch SPST configuration for a frequency range from DC up to 80 GHz (<1.2 dB insertion loss, 18 dB isolation at 60 GHz).
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