Publication not explained
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
Featured Image
Read the Original
This page is a summary of: Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure, Microelectronic Engineering, April 2003, Elsevier,
DOI: 10.1016/s0167-9317(03)00050-9.
You can read the full text:
Contributors
The following have contributed to this page
