What is it about?
In the current study, graphene layers were directly deposited on a silicon (Si) substrate using a simple and cost-effective atmospheric pressure chemical vapor 1 deposition (APCVD) approach and platinum (Pt) thin film as the sacrificial catalyst in the temperature range of 400 to 1100 °C.
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Why is it important?
Among these different approaches, CVD has emerged as the most popular technique to obtain large-scale, high-quality graphene using metal catalysts. However, deposition of graphene on dielectric substrates using this method requires transmission of the graphene layer to the target substrate, which introduces defects into the graphene layers and contaminates them. Therefore, transfer free synthesis of graphene directly on a dielectric substrate is highly desirable, but remains challenging.
Perspectives
This research could be useful for future investigation on the direct deposition of a high-quality graphene sheet on a dielectric substrate, but still, there are some issues such as the growth temperature and cost of the CVD method that should be addressed.
Dr Samira Naghdi
Kyung Hee University
Read the Original
This page is a summary of: Transfer-free chemical vapor deposition of graphene on silicon substrate at atmospheric pressure: A sacrificial catalyst, Thin Solid Films, May 2018, Elsevier,
DOI: 10.1016/j.tsf.2018.05.004.
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