What is it about?
In this work a comprehensive characterization of the stress, elastic modulus, hardness and adhesion of ALD aluminum oxide (Al2O3) films grown at 110–300 °C is presented. Film stress was analyzed by wafer curvature measurements, elastic modulus by nanoindentation and surface-acoustic wave measurements, hardness by nanoindentation and adhesion by microscratch test and scanning nanowear. The films were also analyzed by ellipsometry, optical reflectometry, X-ray reflectivity and time-of-flight elastic recoil detection for refractive index, thickness, density and impurities.
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Why is it important?
ALD films have potential use in various kinds of protective applications and MEMS/NEMS devices, yet their mechanical properties have remained poorly studied. This paper is filling an important vacancy in knowledge with a systematic and thorough study with a large collaborative effort of several universities and research groups.
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This page is a summary of: Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion, Thin Solid Films, February 2014, Elsevier,
DOI: 10.1016/j.tsf.2013.11.112.
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