What is it about?
The current density enhancement and open circuit voltage improvement purpose the proper nanostructure design for Si HJ cell is very significant. In this study aSi and InGaN nanostructure development and comparison of them for improvement of Si HJ solar cell efficiency progression is reported.
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Why is it important?
The solar spectrum and band edge coverage and the current density enhancement purpose it is very essential to implement proper nanostructure that will reduce the optical band absorption or reflection but increase current density.
Perspectives
The solar spectrum and band edge coverage and the current density enhancement purpose it is very essential to implement proper nanostructure that will reduce the optical band absorption or reflection but increase current density.
Dr Bablu K Ghosh
University Malaysia Sabah
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This page is a summary of: Recent progress in Si hetero-junction solar cell: A comprehensive review, Renewable and Sustainable Energy Reviews, February 2018, Elsevier,
DOI: 10.1016/j.rser.2017.07.022.
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