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This page is a summary of: The influence of interfaces and intra-band transitions on the band gap of CdS/HgS and GaN/X (X=InN, In0.33Ga0.67N) core/shell/shell quantum dot quantum well – A theoretical study, Physica E Low-dimensional Systems and Nanostructures, November 2015, Elsevier, DOI: 10.1016/j.physe.2015.07.002.
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