Publication not explained
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
Featured Image
Read the Original
This page is a summary of: Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, July 2016, Elsevier,
DOI: 10.1016/j.nimb.2016.03.028.
You can read the full text:
Contributors
The following have contributed to this page