What is it about?
This article explained about the prospective carrier selective design for future Si HJ solar PV technology. Both cost effectiveness and thermal budget consideration the passivation materials choice and its advancement pathways towards massive industrial development are focused in this study. Si isoelectronic SiO2 interface with metal alike heavily doped polySi to un-doped metal oxides are shown better scope of Si HJ passivation and carrier selectivity.
Featured Image
Why is it important?
It is so important to lessen device interface defects, device efficiency and thermal stability. In this purpose massive technological shift from current back surface field contact is essential. This study is focused that directions.
Perspectives
I think this is key focus and the latest development of Si HJ solar PV technologies. Implementing both theory and practices how the real development is progressing is intuitively reported in this study.
Dr Bablu K Ghosh
University Malaysia Sabah
Read the Original
This page is a summary of: Recent advancements in carrier-selective contacts for high-efficiency crystalline silicon solar cells: Industrially evolving approach, Nano Energy, May 2022, Elsevier,
DOI: 10.1016/j.nanoen.2021.106899.
You can read the full text:
Contributors
The following have contributed to this page
