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Memories are vital part of computing systems. With the development of new information processing chips, advanced memories are required for high speed, low power, low cost, reliable data storage. Non-volatile resistive memories are the most promising candidates for related technologies.
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This page is a summary of: Effect of downsizing and metallization on switching performance of ultrathin hafnium oxide memory cells, Materials Science in Semiconductor Processing, May 2023, Elsevier,
DOI: 10.1016/j.mssp.2023.107346.
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