Low-leakage MIS structures with 1.5-6 nm CaF2 insulating layer on Si(111)

  • N.S. Sokolov, I.V. Grekhov, S. Ikeda, A.K. Kaveev, A.V. Krupin, K. Saiki, K. Tsutsui, S.E. Tyaginov, M.I. Vexler
  • Microelectronic Engineering, September 2007, Elsevier
  • DOI: 10.1016/j.mee.2007.04.065

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http://dx.doi.org/10.1016/j.mee.2007.04.065

The following have contributed to this page: Dr Susumu Ikeda