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β-Ga₂O₃ was epitaxially grown on diamond (111) by RF sputtering. The film stayed stable up to 900 °C, retaining crystallinity and reducing oxygen vacancies. At 1000 °C, structural damage occurred due to interfacial graphitization, limiting thermal endurance.
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This page is a summary of: Thermal annealing effects on β-Ga2O3/diamond (111) heteroepitaxial structures fabricated by radio frequency magnetron sputtering, Materials Letters, October 2025, Elsevier,
DOI: 10.1016/j.matlet.2025.138753.
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