First-principles calculation on dilute magnetic alloys in zinc blend crystal structure

What is it about?

The III–V semiconductors and their alloys are extensively used in photonics and optoelectronics. These materials are mostly used for high-frequency light emitting diodes, optical detectors and laser diodes due to their high melting points, high thermal conductivity, large bulk modulus and wide band gaps. The binary compounds GaP and GaAS have been very promising candidates for advance technology. Most interestingly their band gap can be varied by alloying. This alloying effectively increases the range of applications of GaP and GaAs compounds.

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Why is it important?

Diluted magnetic semiconductors (DMS) are very promising materials for optoelectronic and spintronics applications. III–V compounds when doped with 3d transition elements this turn them to be as III–V DMS. The III–V DMS compounds attracted consideration for the possible increase in efficiency and miniaturization of the electronic devices. Different DMS compounds have been intensively studied theoretically as well as experimentally to design efficient devices like super smart diodes, super smart memory chips, spin valves and spin field effect transistors. It is essential to explain the known properties of a given material designed for the fabrication of highly efficient electronic and spintronics devices and even to predict different properties of hypothetical materials.

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