MOCVD growth of Ga2Se3 on GaAs(100) and GaP(100): a Raman study

M. von der Emde, D.R.T. Zahn, T. Ng, N. Maung, G.H. Fan, I.B. Poole, J.O. Williams, A.C. Wright
  • Applied Surface Science, September 1996, Elsevier
  • DOI: 10.1016/s0169-4332(96)00205-x

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http://dx.doi.org/10.1016/s0169-4332(96)00205-x

The following have contributed to this page: Professor Dietrich RT Zahn