Growth of high quality silicon carbide films by bias enhanced low-pressure HFCVD using methane

V.C George, A Das, M Roy, A.K Dua, P Raj, D.R.T Zahn
  • Applied Surface Science, May 2003, Elsevier
  • DOI: 10.1016/s0169-4332(03)00070-9

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The following have contributed to this page: Professor Dietrich RT Zahn