A deconvolution of the transient response of (100) Si/SiO2 semiconductor–insulator interface states according to small pulse excitation: evidence of different branches of charge transition

R. Beyer, H. Burghardt, I. Thurzo, D.R.T. Zahn, T. Geßner
  • Solid-State Electronics, August 2000, Elsevier
  • DOI: 10.1016/s0038-1101(00)00064-2

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http://dx.doi.org/10.1016/s0038-1101(00)00064-2

The following have contributed to this page: Professor Dietrich RT Zahn