A study of the interface states in MIS-structures with thin SiO2 and SiOxNy layers using deep level transient spectroscopy

R. Beyer, H. Burghardt, E. Thomas, R. Reich, D.R.T. Zahn, T. Geßner
  • Microelectronics Reliability, February 1999, Elsevier
  • DOI: 10.1016/s0026-2714(98)00235-2
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The following have contributed to this page: Professor Dietrich RT Zahn