Reduced-stress GaN epitaxial layers grown on Si(111) by using a porous GaN interlayer converted from GaAs

Bablu K. Ghosh, Toru Tanikawa, Akihiro Hashimoto, Akio Yamamoto, Yoshifumi Ito
  • Journal of Crystal Growth, March 2003, Elsevier
  • DOI: 10.1016/s0022-0248(02)02223-6
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The following have contributed to this page: Dr Bablu K Ghosh