What is it about?
Reactive sputtering of W in Kr/TMB plasmas results in growth of W-rich 100-oriented WC1-x with a potential boron solid solution. The applied TMB flow with ~93 at.%W at 1 sccm and ~72 at.%W at 10 sccm determines the metal content for films deposited ≤600 Å degrees C
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Why is it important?
The momentum transfer is much better with a heavy inert gas like Kr compared to Ar. At higher growth temperatures than 600 degrees, the hardness decreases by a factor of 3 to 4 following the formation of WSi2 at 700–800 degrees C and Si-rich surface at 900 degrees C.
Read the Original
This page is a summary of: Reactive magnetron sputtering of tungsten target in krypton/trimethylboron atmosphere, Thin Solid Films, June 2019, Elsevier, DOI: 10.1016/j.tsf.2019.06.034.
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