Temperature dependent compact modeling of gate tunneling leakage current in double gate MOSFETs

  • Ghader Darbandy, Jasmin Aghassi, Josef Sedlmeir, Udit Monga, Ivan Garduño, Antonio Cerdeira, Benjamin Iñiguez
  • Solid-State Electronics, March 2013, Elsevier
  • DOI: 10.1016/j.sse.2012.11.009

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http://dx.doi.org/10.1016/j.sse.2012.11.009