Memory operation of Pt–SrBi2Ta2O9–Y2O3–Si field-effect transistor with damage-free selective dry etching process

  • Sun Il Shim, Young Suk Kwon, Seong-Il Kim, Yong Tae Kim, Jung Ho Park
  • Solid-State Electronics, March 2005, Elsevier
  • DOI: 10.1016/j.sse.2004.11.015

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http://dx.doi.org/10.1016/j.sse.2004.11.015