What is it about?
Tin disulfide (SnS2) thin films, prized for their diverse structural and electrical properties, are increasingly explored for practical applications. This study investigates the controlled doping of SnS2 with selected alkali metals (Li, Na, and K) via a spray-coating method to enhance its functionality, particularly in resistive humidity sensing. The deposition process, meticulously designed for uniformity and reproducibility, incorporates precise concentrations of dopants to modulate film characteristics. X-ray diffraction analysis reveals alterations in lattice parameters and crystallite size (increase from 10 nm to 18 nm) due to doping. X-ray photoelectron spectroscopy elucidates shifts in binding energies and stoichiometry changes induced by dopants. Electrical investigations demonstrate semiconductor behavior, with doped films exhibiting reduced resistance and increased capacitance under humidity, which is critical for humidity sensing. Particularly, Li-doped films display a sensitivity of 18.78 pF/ % RH and a response time of 85 seconds, suggesting promising applications in humidity sensing technology. This comprehensive study provides insights into the intricate interplay between dopants and SnS2 properties, paving the way for tailored material design and sensor development.
Featured Image
Photo by Ambo Ampeng on Unsplash
Why is it important?
This study investigates the controlled doping of SnS2 with selected alkali metals (Li, Na, and K) via a spray-coating method to enhance its functionality, particularly in resistive humidity sensing. The deposition process, meticulously designed for uniformity and reproducibility, incorporates precise concentrations of dopants to modulate film characteristics. X-ray diffraction analysis reveals alterations in lattice parameters and crystallite size (increase from 10 nm to 18 nm) due to doping. X-ray photoelectron spectroscopy elucidates shifts in binding energies and stoichiometry changes induced by dopants. Electrical investigations demonstrate semiconductor behavior, with doped films exhibiting reduced resistance and increased capacitance under humidity, which is critical for humidity sensing. Particularly, Li-doped films display a sensitivity of 18.78 pF/ % RH and a response time of 85 seconds, suggesting promising applications in humidity sensing technology. This comprehensive study provides insights into the intricate interplay between dopants and SnS2 properties, paving the way for tailored material design and sensor development.
Perspectives
Tin disulfide (SnS2) thin films, prized for their diverse structural and electrical properties, are increasingly explored for practical applications. This study investigates the controlled doping of SnS2 with selected alkali metals (Li, Na, and K) via a spray-coating method to enhance its functionality, particularly in resistive humidity sensing. The deposition process, meticulously designed for uniformity and reproducibility, incorporates precise concentrations of dopants to modulate film characteristics. X-ray diffraction analysis reveals alterations in lattice parameters and crystallite size (increase from 10 nm to 18 nm) due to doping. X-ray photoelectron spectroscopy elucidates shifts in binding energies and stoichiometry changes induced by dopants. Electrical investigations demonstrate semiconductor behavior, with doped films exhibiting reduced resistance and increased capacitance under humidity, which is critical for humidity sensing. Particularly, Li-doped films display a sensitivity of 18.78 pF/ % RH and a response time of 85 seconds, suggesting promising applications in humidity sensing technology. This comprehensive study provides insights into the intricate interplay between dopants and SnS2 properties, paving the way for tailored material design and sensor development.
Professor Mohammad Mansoob Khan
Universiti Brunei Darussalam
Read the Original
This page is a summary of: Unveiling growth and characterization of alkali metals-doped SnS2 thin films for resistive humidity sensing, Sensors and Actuators A Physical, April 2025, Elsevier,
DOI: 10.1016/j.sna.2025.116308.
You can read the full text:
Resources
Unveiling growth and characterization of alkali metals-doped SnS2 thin films for resistive humidity sensing
Tin disulfide (SnS2) thin films, prized for their diverse structural and electrical properties, are increasingly explored for practical applications. This study investigates the controlled doping of SnS2 with selected alkali metals (Li, Na, and K) via a spray-coating method to enhance its functionality, particularly in resistive humidity sensing. The deposition process, meticulously designed for uniformity and reproducibility, incorporates precise concentrations of dopants to modulate film characteristics. X-ray diffraction analysis reveals alterations in lattice parameters and crystallite size (increase from 10 nm to 18 nm) due to doping. X-ray photoelectron spectroscopy elucidates shifts in binding energies and stoichiometry changes induced by dopants. Electrical investigations demonstrate semiconductor behavior, with doped films exhibiting reduced resistance and increased capacitance under humidity, which is critical for humidity sensing. Particularly, Li-doped films display a sensitivity of 18.78 pF/ % RH and a response time of 85 seconds, suggesting promising applications in humidity sensing technology. This comprehensive study provides insights into the intricate interplay between dopants and SnS2 properties, paving the way for tailored material design and sensor development.
Unveiling growth and characterization of alkali metals-doped SnS2 thin films for resistive humidity sensing
Tin disulfide (SnS2) thin films, prized for their diverse structural and electrical properties, are increasingly explored for practical applications. This study investigates the controlled doping of SnS2 with selected alkali metals (Li, Na, and K) via a spray-coating method to enhance its functionality, particularly in resistive humidity sensing. The deposition process, meticulously designed for uniformity and reproducibility, incorporates precise concentrations of dopants to modulate film characteristics. X-ray diffraction analysis reveals alterations in lattice parameters and crystallite size (increase from 10 nm to 18 nm) due to doping. X-ray photoelectron spectroscopy elucidates shifts in binding energies and stoichiometry changes induced by dopants. Electrical investigations demonstrate semiconductor behavior, with doped films exhibiting reduced resistance and increased capacitance under humidity, which is critical for humidity sensing. Particularly, Li-doped films display a sensitivity of 18.78 pF/ % RH and a response time of 85 seconds, suggesting promising applications in humidity sensing technology. This comprehensive study provides insights into the intricate interplay between dopants and SnS2 properties, paving the way for tailored material design and sensor development.
Contributors
The following have contributed to this page
