Annealing study of a bistable defect in proton-implanted n-type 4H-SiC

  • H.Kortegaard Nielsen, D.M. Martin, P. Lévêque, A. Hallén, B.G. Svensson
  • Physica B Condensed Matter, December 2003, Elsevier
  • DOI: 10.1016/j.physb.2003.09.151

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The following have contributed to this page: Dr David M Martin