What is it about?
This innovation focuses on creating energy-efficient LEDs by improving its material preparation and structure. Results indicate that the use of AlN/GaN ML significantly reduces the defect on the surface of the nitride film. In addition, the increase of AlN/GaN pairs also enhances the crystal quality by 10-20% dues to the reduction of defect density. Hence, it can be concluded that the AlN/GaN ML plays a significant role in growing improved semi-polar thin films of LEDs.
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Why is it important?
The production of LED materials has always been challenging due to defect densities, high production costs and complex production processes. This study offers a convenient, cost-effective technique of preparing (growing) better materials by significantly enhancing the surface and structure of these materials. The production of better materials for LEDs will in turn make clean energy available and affordable to everyone.
Read the Original
This page is a summary of: Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire, Materials Science in Semiconductor Processing, November 2018, Elsevier, DOI: 10.1016/j.mssp.2018.06.014.
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