Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator

D. Kunder, E. Baer, M. Sekowski, P. Pichler, M. Rommel
  • Microelectronic Engineering, May 2010, Elsevier
  • DOI: 10.1016/j.mee.2009.11.007
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The following have contributed to this page: Dr. Mathias Rommel