What is it about?
ψ-Graphene is a new metallic allotrope of planar Carbon (GR) with sp2 hybridization composed of 5–6-7 C rings obtained of the unit cell composed of 5–6-5 C rings. Due to its unique structure and metallicity, ψ-GR exhibits a low diffusion energy barrier and high storage capacity for Li ions. The metallicity of ψ-GR limits its applications in electronics and optoelectronics. So, we investigate the tuning transport properties of 1D and 2D ψ-Graphene for application in electronic devices.
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Why is it important?
In this work, we built two equivalent molecular devices via DFT/NEGF replicating the 2D and 1D ψ-Graphene unit cell composed by C12 and C24H6. Our results exhibit that the hydrogenation at the edge for 1D ψ-Graphene makes energetically stable, more structurally stable and reduces driving on device signature between 0 V and 0.25 V (Switching) and 0.25 V-0.5 V (resonant tunnel diode - RTD) while the 2D device has RTD signature. The density of states and transmission eingenchannels confirm metallic behavior and semiconductor–metal transition for two devices. The negative differential resistance (NDR) is identified in the two devices by transition voltage spectroscopy. Our discoveries make the 1D ψ-Graphene highly promising in nanoelectronics applications for tuning transport properties.
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This page is a summary of: Tuning transport properties for 1D and 2D ψ-Graphene, Materials Letters, April 2022, Elsevier, DOI: 10.1016/j.matlet.2022.131776.
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Tuning transport properties for 1D and 2D ψ-Graphene
Highlights • 2D and 1D Ψ-Graphene have metallic behavior and semiconductor–metal transition. • 1D Ψ-Graphene has better tuning transport properties than 2D Ψ-Graphene. • The hydrogenation on the edges is responsible by tuning transport properties. • 1D Ψ-Graphene exhibits Switching and RTD signature while 2D Ψ-Graphene has RTD signature. •1D Ψ-Graphene is highly promising in nanoelectronics applications.
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