Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry

U. Rossow, T. Fieseler, D.R.T. Zahn, W. Richter, D.A. Woolf, D.I. Westwood, R.H. Williams
  • Materials Science and Engineering B, January 1990, Elsevier
  • DOI: 10.1016/0921-5107(90)90074-l
The author haven't finished explaining this publicationThe author haven't finished explaining this publication
Read Publication

http://dx.doi.org/10.1016/0921-5107(90)90074-l

The following have contributed to this page: Professor Dietrich RT Zahn