Novel method of strain-relaxed Si1−xGex growth on Si(100) by MBE

H. Iwano, K. Yoshikawa, A. Kojima, K. Hayashi, S. Zaima, Y. Yasuda
  • Applied Surface Science, July 1996, Elsevier
  • DOI: 10.1016/0169-4332(96)00324-8

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

The following have contributed to this page: Professor Kenichi Yoshikawa