Bismuth on GaAs(110): Characterisation of growth mode and Schottky barrier formation at low and room temperature

N. Esser, M. Hünermann, U. Resch, D. Spaltmann, J. Geurts, D.R.T. Zahn, W. Richter, R.H. Williams
  • Applied Surface Science, January 1990, Elsevier
  • DOI: 10.1016/0169-4332(89)90051-2

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http://dx.doi.org/10.1016/0169-4332(89)90051-2

The following have contributed to this page: Professor Dietrich RT Zahn