Publication not explained
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
Featured Image
Read the Original
This page is a summary of: Influence of strain in the reduction of the internal electric field in GaN/AlN quantum dots grown ona-plane 6H-SiC, physica status solidi (b), June 2006, Wiley, DOI: 10.1002/pssb.200565103.
You can read the full text:
Contributors
The following have contributed to this page