What is it about?
A two side contacted solar cell (n-type passivated emitter, rear totally diffused) is discussed and the progress so far presented. Selective laser doping has been introduced in the flow, allowing higher performance in the contact area. Simplifications have been implemented towards a more industrial annealing sequence, by replacing expensive forming gas annealing steps with a belt furnace annealing. By applying these improvements, 22.5% efficient cells have been realized on large area.
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Why is it important?
It contains record efficiencies for this type of solar cell
Perspectives
In this paper, several improvements have been shown to push the efficiency up to 22.5%
Mr Angel Uruena
imec
Read the Original
This page is a summary of: Progress on large area n-type silicon solar cells with front laser doping and a rear emitter, Progress in Photovoltaics Research and Applications, March 2016, Wiley,
DOI: 10.1002/pip.2767.
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