What is it about?
This X-band PA employs thin-film microstrip lines for flat in-band efficiency, gain, and output power.
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Why is it important?
Performance variations in the conventional lumped element approach can be minimized.
Perspectives
The proposed design technique can be applied to a variety of high-frequency circuits including PAs, LNA, VCOs etc., for reduced in-band variations.
Dr Ickhyun Song
Georgia Institute of Technology
Read the Original
This page is a summary of: Inverse class-FX-band SiGe HBT power amplifier with 44% PAE and 24.5 dBm peak output power, Microwave and Optical Technology Letters, September 2016, Wiley,
DOI: 10.1002/mop.30177.
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