Solution-Processed Amorphous-Oxide-Semiconductor Transistors with Organic Gate Dielectrics

What is it about?

Amorphous-metal-oxide-semiconductor transistors have conventionally employed inorganic gate dielectrics, due to their suitable electronic, chemical, and mechanical compatibility. This work shows that organic gate dielectrics are also widely applicable to amorphous metal-oxide semiconductors. In fact, organic dielectrics allow state-of-the-art transistor performance and excellent stability. In particular, an organic dielectric of the relaxor-ferroelectric kind also enables operation at low power-supply voltage. Considering that a wide range of them can be processed from solution and at low temperature, organic gate dielectrics thus constitute an attractive route for the realization of amorphous-metal-oxide transistor circuits on flexible plastic substrates.

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