What is it about?
In-Ga-Zn-O thin films are important for electronic applications. Such thin films were fabricated using a solution process. We have shown that the environment of some Zn atoms is responsible for electronic defects.
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Why is it important?
We show that the electronic defects of the IGZO-based transistors are linked to the Zn atoms localized at the ZnO nanocluster boundary. In order to improve the transistor performances, the IGZO thin films have to be tailored with no oxygen undercoordination around Zn.
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This page is a summary of: Local structure around Zn and Ga in solution-processed In-Ga-Zn-O and implications for electronic properties, physica status solidi (RRL) - Rapid Research Letters, October 2015, Wiley, DOI: 10.1002/pssr.201510322.
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