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  1. Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars
  2. 4H-SiC trench MOSFET with integrated fast recovery MPS diode
  3. Numerical Study of Energy Capability of Si/SiC LDMOSFETs
  4. Si/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device Simulation
  5. Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications
  6. Si/SiC substrates for the implementation of linear-doped power LDMOS studied with device simulation