All Stories

  1. 6.5 kV Si/SiC Hybrid Power Module Technology

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Dr YOGESH SHARMA

  2. Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Dr YOGESH SHARMA, Francesco La Via

  3. Effect of Design Variations and N2O Annealing on 1.7kV 4H-SiC Diodes

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Dr YOGESH SHARMA

  4. Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/Si

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr YOGESH SHARMA, Dr David M Martin

  5. High Temperature Nitridation of 4H-SiC MOSFETs

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr YOGESH SHARMA, Dr David M Martin, Tianxiang Dai

  6. Ohmic Contact on n-Type 3C-SiC Activated with SiO2 Encapsulation

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Dr YOGESH SHARMA

  7. Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Dr YOGESH SHARMA

  8. The Effects of Phosphorous at the SiO2/4H-SiC Interface

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Dr YOGESH SHARMA

  9. Stable Phosphorus Passivated SiO2/4H-SiC Interface Using Thin Oxides

    Article • Materials Science Forum, October 2014, Trans Tech Publications

    Tamara F Isaacs-Smith, Dr YOGESH SHARMA

  10. The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors

    Article • Materials Science Forum, October 2014, Trans Tech Publications

    Dr YOGESH SHARMA

  11. Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C

    Article • IEEE Journal of the Electron Devices Society, September 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr YOGESH SHARMA

  12. Study of breakdown characteristics of 4H-SiC Schottky diode with improved 2-step mesa junction termination extension

    Article • August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr YOGESH SHARMA

  13. Improved stability of 4H SiC-MOS devices after phosphorous passivation with etching process

    Article • International Journal of Fundamental Physical Sciences, June 2014, Fundamental Journals

    Dr YOGESH SHARMA

  14. Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces

    Article • Journal of Electronic Materials, March 2014, Springer Science + Business Media

    Dr YOGESH SHARMA

  15. Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Dr YOGESH SHARMA

  16. 4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Dr YOGESH SHARMA

  17. On the Ti3SiC2 Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Dr YOGESH SHARMA

  18. Enhanced Forward Bias Operation of 4H-SiC PiN Diodes Using High Temperature Oxidation

    Article • MRS Proceedings, January 2014, Cambridge University Press

    Dr YOGESH SHARMA

  19. Physical and Electrical Characterisation of 3C-SiC and 4H-SiC for Power Semiconductor Device Applications

    Article • November 2013, Springer Science + Business Media

    Dr YOGESH SHARMA

  20. Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

    Article • IEEE Electron Device Letters, February 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr YOGESH SHARMA

  21. High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer

    Article • IEEE Electron Device Letters, February 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr YOGESH SHARMA

  22. The Effects of Phosphorus at the SiO2/4H-SiC Interface

    Article • Materials Science Forum, May 2012, Trans Tech Publications

    Dr YOGESH SHARMA

  23. Phosphorous passivation of the SiO2/4H–SiC interface

    Article • Solid-State Electronics, February 2012, Elsevier

    Dr YOGESH SHARMA