All Stories

  1. Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults
  2. Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC
  3. Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology
  4. Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors
  5. Properties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process
  6. Anomalous Fowler-Nordheim Tunneling through SiO2/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current Measurements
  7. Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers
  8. X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions
  9. Electrical characteristics of Ni/4H-SiC Schottky Contacts with Ge
  10. Contacts to p-Type Implanted 4H-SiC
  11. Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3