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  1. SRAM cell with asymmetric pass-gate nMOSFETs for embedded memory applications

    Article • Electronics Letters, June 2016, the Institution of Engineering and Technology (the IET)

    Weiwei He

  2. Floating body gate cell with fast write speed for embedded memory applications

    Article • Electronics Letters, June 2016, the Institution of Engineering and Technology (the IET)

    Weiwei He