All Stories

  1. Deviation from Regular Shape in the Early Stages of Formation of Strain-Driven 3D InGaAs/GaAs Micro/Nanotubes
  2. Molecular Beam Epitaxy: An Overview
  3. Photoelectric properties of the metamorphic InAs/InGaAs quantum dot structure at room temperature
  4. Low-temperature growth of single-crystal Cu(In,Ga)Se2 films by pulsed electron deposition technique
  5. Modelling of broadband light sources based on InAs / InxGa1-xAs metamorphic quantum dots
  6. Single-crystal CuIn1−xGaxSe2 films grown on lattice-matched Ge by low-temperature Pulsed Electron Deposition technique
  7. Epitaxial germanium deposited by MOVPE on InGaAs quantum dot stressors grown by MBE
  8. Sub‐critical InAs layers on metamorphic InGaAs for single quantum dot emission at telecom wavelengths
  9. Two-color emission from Quantum Dots
  10. Tunable fiber Bragg gratings at 1.3 microns to improve the characterization of InAs Quantum Dot emission
  11. Time resolved emission at 1.3 μm of a single InAs quantum dot by using a tunable fibre Bragg grating
  12. Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures
  13. Wetting layer states in low density InAs/InGaAs quantum dots from sub-critical InAs coverages
  14. The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots
  15. Wetting layer in metamorphic quantum dots
  16. Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots
  17. 2D–3D growth transition in metamorphic InAs/InGaAs quantum dots
  18. Single photon sources based on quantum dots
  19. Publisher’s note: “Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates” [Appl. Phys. Lett. 98, 173112 (2011)]
  20. Single QD emit at telecom wavelengths
  21. Raman scattering in InAs/AlGaAs quantum dot nanostructures
  22. MBE growth and properties of low‐density InAs/GaAs quantum dot structures
  23. Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping
  24. Molecular Beam Epitaxy: An Overview
  25. Properties of wetting layer states in low density InAs quantum dot nanostructures emitting at 1.3 μm: Effects of InGaAs capping
  26. Metamorphic quantum dots: Quite different nanostructures
  27. Low Density Metamorphic Quantum Dot structures with emission in the 1.3 – 1.55μm window
  28. Thermal activated carrier transfer between InAs quantum dots in very low density samples
  29. Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs
  30. Low density InAs/(In)GaAs quantum dots emitting at long wavelengths
  31. The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures
  32. The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission
  33. Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots
  34. 1.59 μ m room temperature emission from metamorphic InAs∕InGaAs quantum dots grown on GaAs substrates
  35. Purcell effect in micropillars with oxidized Bragg mirrors
  36. Optical switching of quantum states inside self-assembled quantum dots
  37. Exciton, biexciton and trion recombination dynamics in a single quantum dot under selective optical pumping
  38. Defects in nanostructures with ripened InAs/GaAs quantum dots
  39. Selective optical pumping of charged excitons in unintentionally doped InAs quantum dots
  40. Engineering of Quantum Dot Nanostructures for Photonic Devices
  41. Effects of the quantum dot ripening in high-coverage InAs∕GaAs nanostructures
  42. Metamorphic quantum dot nanostructures for long wavelength operation with enhanced emission efficiency
  43. 1.46 μm room-temperature emission from InAs/InGaAs quantum dot nanostructures
  44. Residual strain measurements in InGaAs metamorphic buffer layers on GaAs
  45. Quantum dot strain engineering of InAs∕InGaAs nanostructures
  46. Carrier thermodynamics in InAs ∕ In x Ga 1 − x As quantum dots
  47. Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures
  48. Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM
  49. Metamorphic self-assembled quantum dot nanostructures
  50. Metamorphic buffers and optical measurement of residual strain
  51. Defect passivation in strain engineered InAs/(InGa)As quantum dots
  52. Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5μm
  53. Developments in surface magneto-optical Kerr effect setup for ultrahigh vacuum analysis of magnetic ultrathin films
  54. Hydrogenation of strain engineered InAs/In x Ga 1− x As quantum dots
  55. The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures
  56. Quantum dot nanostructures and molecular beam epitaxy
  57. The OH vibrational spectrum in Bi2TeO5single crystals