All Stories

  1. High-performance light-emitting diodes using hierarchical m-plane GaN nano-prism light extractors

    Article • Journal of Materials Chemistry C, January 2015, Royal Society of Chemistry

    JA-SOON JANG

  2. Real-time smart lighting control using human motion tracking from depth camera

    Article • Journal of Real-Time Image Processing, April 2014, Springer Science + Business Media

    JA-SOON JANG

  3. Electrical characteristics of TMAH-surface treated Ni/Au/Al2O3/GaN MIS Schottky structures

    Article • Electronic Materials Letters, March 2014, Springer Science + Business Media

    JA-SOON JANG

  4. Dual detection of ultraviolet and visible lights using a DNA-CTMA/GaN photodiode with electrically different polarity

    Article • Optics Express, January 2014, Optical Society of America (OSA)

    JA-SOON JANG

  5. Real time observation of ZnO nanostructure formation via the solid–vapor and solid–solid–vapor mechanisms

    Article • Nanoscale, January 2014, Royal Society of Chemistry

    JA-SOON JANG

  6. Influence of tetramethylammonium hydroxide treatment on the electrical characteristics of Ni/Au/GaN Schottky barrier diode

    Article • Materials Chemistry and Physics, January 2014, Elsevier

    JA-SOON JANG

  7. 실내 원예활동이 초등학생의 주의집중력 향상에 미치는 영향

    Article • Korean Journal of Horticultural Science and Technology, December 2013, Korean Society of Horticultural Science

    JA-SOON JANG

  8. 원예활동이 발달장애 아동의 사회･정서 발달과 자기표현 능력에 미치는 영향

    Article • Journal of People Plants and Environment, December 2013, Korean Society for People, Plants, and Environment

    JA-SOON JANG

  9. Frequency dependent series resistance and interface states in Au/bio-organic/n-GaN Schottky structures based on DNA biopolymer

    Article • Synthetic Metals, December 2013, Elsevier

    JA-SOON JANG

  10. Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

    Article • Journal of Applied Polymer Science, August 2013, Wiley

    JA-SOON JANG

  11. Electrical, optical, and structural characteristics of ohmic contacts between p-GaN and ITO deposited by DC- and RF-magnetron sputtering

    Article • Electronic Materials Letters, July 2013, Springer Science + Business Media

    JA-SOON JANG

  12. Effects of Horticultural Activities on Self-regulation and Self-expression of Children with Developmental Disabilities

    Article • Journal of People Plants and Environment, April 2013, Korean Society for People, Plants, and Environment

    JA-SOON JANG

  13. Electrical characteristics and carrier transport mechanism for Ti/p-GaN Schottky diodes

    Article • Electronic Materials Letters, March 2013, Springer Science + Business Media

    JA-SOON JANG

  14. Carrier Transport Mechanism at the Interface between Metals and p-Type III–Nitrides Having Different Surface Electronic Structures

    Article • Japanese Journal of Applied Physics, September 2012, Japan Society of Applied Physics

    JA-SOON JANG

  15. Carrier Transport Mechanism at the Interface between Metals and p-Type III–Nitrides Having Different Surface Electronic Structures

    Article • Japanese Journal of Applied Physics, September 2012, Japan Society of Applied Physics

    JA-SOON JANG

  16. Carrier transport mechanism of strained AlGaN/GaN Schottky contacts

    Article • Current Applied Physics, July 2012, Elsevier

    JA-SOON JANG

  17. High-performance and current crowding-free InGaN-GaN-based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped p-GaN

    Article • Frontiers of Optoelectronics, May 2012, Springer Science + Business Media

    JA-SOON JANG

  18. A simple model for a lane detection system

    Article • SPIE Newsroom, February 2012, SPIE

    JA-SOON JANG

  19. Optical design for LED dental lighting with imaging optic technique

    Article • September 2011, SPIE

    JA-SOON JANG

  20. An efficient lane markers detection algorithm using log-polar transform and RANSAC

    Article • September 2011, SPIE

    JA-SOON JANG

  21. Electrostatic discharge influence on carrier dynamics and reliability characteristics of GaN-based blue light-emitting diodes

    Article • July 2011, Institute of Electrical & Electronics Engineers (IEEE)

    JA-SOON JANG

  22. Cr/n-AlGaN/GaN Schottky Contact에서 높은 쇼트키 장벽 형성 메카니즘에 관한 연구

    Article • Journal of the Korean Institute of Electrical and Electronic Material Engineers, April 2011, The Korean Institute of Electrical and Electronic Material Engineers

    JA-SOON JANG

  23. Degradation mechanism of light‐emitting diodes on patterned sapphire substrate

    Article • physica status solidi (a), June 2010, Wiley

    JA-SOON JANG

  24. Schottky Barrier Characteristics and Carrier Transport Mechanism for Ohmic Contacts to Strained p-Type InGaN/GaN Superlattice

    Article • Electrochemical and Solid-State Letters, January 2010, The Electrochemical Society

    JA-SOON JANG

  25. Optimum condition for the growth of Pt–CeO2 nanocomposite electrodes for thin-film fuel cells

    Article • Journal of Alloys and Compounds, April 2009, Elsevier

    JA-SOON JANG

  26. High output power GaN-based light-emitting diodes using an electrically reverse-connected p-Schottky diode and p-InGaN–GaN superlattice

    Article • Applied Physics Letters, August 2008, American Institute of Physics

    JA-SOON JANG

  27. Possible Ohmic Mechanisms of Ag/Indium Tin Oxide p-Type Contacts for High-Brightness GaN-Based Light Emitting Diodes

    Article • Electrochemical and Solid-State Letters, January 2008, The Electrochemical Society

    JA-SOON JANG

  28. Formation mechanisms of low-resistance and thermally stable Pd∕Ni∕Pd∕Ru Ohmic contacts to Mg-doped Al0.15Ga0.85N

    Article • Applied Physics Letters, August 2007, American Institute of Physics

    JA-SOON JANG

  29. Erratum: “Formation mechanism of cerium oxide-doped indium oxide/Ag ohmic contacts on p-type GaN” [Appl. Phys. Lett. 89, 262115 (2006)]

    Article • Applied Physics Letters, February 2007, American Institute of Physics

    JA-SOON JANG

  30. Electronic Transport Mechanism for Nonalloyed Ti-Based Ohmic Contacts to Strained n-AlGaN∕GaN Heterostructure

    Article • Electrochemical and Solid-State Letters, January 2007, The Electrochemical Society

    JA-SOON JANG

  31. Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p-In0.15Ga0.85N∕p-GaN layer

    Article • Journal of Applied Physics, January 2007, American Institute of Physics

    JA-SOON JANG

  32. Plasma-Induced Damage Influence on the n-Contact Properties and Device Performance of Ultraviolet InGaN∕AlGaN Light-Emitting Diodes

    Article • Journal of The Electrochemical Society, January 2007, The Electrochemical Society

    JA-SOON JANG

  33. Formation mechanism of cerium oxide-doped indium oxide/Ag Ohmic contacts on p-type GaN

    Article • Applied Physics Letters, December 2006, American Institute of Physics

    JA-SOON JANG

  34. Electrical properties of nonalloyed Ni/Au ohmic contacts to laser-irradiated p-GaN

    Article • Journal of Materials Science Materials in Electronics, October 2006, Springer Science + Business Media

    JA-SOON JANG

  35. Electronic transport mechanism for nonalloyed Ti-based Ohmic contacts to n-AlGaN

    Article • Journal of Applied Physics, August 2006, American Institute of Physics

    JA-SOON JANG

  36. Formation of low resistance nonalloyed ohmic contacts to p‐type GaN by KrF laser irradiation

    Article • physica status solidi c, June 2006, Wiley

    JA-SOON JANG

  37. Schottky barrier characteristics of Pt contacts to n-type InGaN

    Article • Journal of Applied Physics, April 2006, American Institute of Physics

    JA-SOON JANG

  38. Formation of low-resistance transparent Ni/Au ohmic contacts to a polarization field-induced p-InGaN/GaN superlattice

    Article • Semiconductor Science and Technology, March 2006, Institute of Physics Publishing

    JA-SOON JANG

  39. Low Resistance and High Reflectance Pt/Rh Contacts to p-Type GaN for GaN-Based Flip Chip Light-Emitting Diodes

    Article • Journal of The Electrochemical Society, January 2005, The Electrochemical Society

    JA-SOON JANG

  40. High brightness GaN-based light emitting diodes using ITO/n+-InGaN/InGaN superlattice/n+-GaN/p-GaN tunneling junction

    Article • phys stat sol (a), September 2004, Wiley

    JA-SOON JANG

  41. Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN

    Article • Journal of Electronic Materials, September 2002, Springer Science + Business Media

    JA-SOON JANG

  42. Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN

    Article • Journal of Electronic Materials, February 2001, Springer Science + Business Media

    JA-SOON JANG

  43. Effects of N[sub 2]O Plasma Surface Treatment on the Electrical and Ohmic Contact Properties of n-Type GaN

    Article • Electrochemical and Solid-State Letters, January 2001, The Electrochemical Society

    JA-SOON JANG

  44. Ultrahigh transparency of Ni/Au ohmic contacts to surface-treated p-type GaN

    Article • Journal of Applied Physics, November 2000, American Institute of Physics

    JA-SOON JANG

  45. Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN

    Article • Journal of Applied Physics, September 2000, American Institute of Physics

    JA-SOON JANG

  46. Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN

    Article • Applied Physics Letters, May 2000, American Institute of Physics

    JA-SOON JANG

  47. Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN

    Article • Applied Physics Letters, May 2000, American Institute of Physics

    JA-SOON JANG

  48. Electrical and Structural Properties of W Ohmic Contacts to InGaN

    Article • Journal of The Electrochemical Society, January 2000, The Electrochemical Society

    JA-SOON JANG

  49. Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN

    Article • Applied Physics Letters, January 1999, American Institute of Physics

    JA-SOON JANG

  50. Interfacial Reaction of Ni/Pt/Au Contact Schemes to p-Type GaN

    Article • Journal of The Electrochemical Society, January 1999, The Electrochemical Society

    JA-SOON JANG

  51. High Quality Non-Alloyed Pt Ohmic Contacts to P-Type GaN Using Two-Step Surface Treatment

    Article • MRS Proceedings, January 1999, Springer Science + Business Media

    JA-SOON JANG

  52. Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 1999, American Vacuum Society

    JA-SOON JANG

  53. Ohmic contacts to p-type GaN using a Ni/Pt/Au metallization scheme

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, November 1998, American Vacuum Society

    JA-SOON JANG

  54. Formation of Ni/Pt/Au Ohmic Contacts to p-GaN

    Article • MRS Proceedings, January 1997, Springer Science + Business Media

    JA-SOON JANG