All Stories

  1. Analysis of carrier lifetimes in N + B-doped n-type 4H-SiC epilayers

    Article • Journal of Applied Physics, August 2019, American Institute of Physics

    Dr Anli Yang

  2. Atomic disorder of Li0.5Ni0.5O thin films caused by Li doping: estimation from X-ray Debye–Waller factors

    Article • Journal of Applied Crystallography, November 2015, International Union of Crystallography

    Dr Anli Yang