All Stories

  1. Design of fault-tolerant microprocessors for space applications

    Article • Acta Astronautica, April 2019, Elsevier

    Dr Maxim S Gorbunov

  2. Circuit-Level Layout-Aware Modeling of Single-Event Effects in 65-nm CMOS ICs

    Article • IEEE Transactions on Nuclear Science, August 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  3. On board electronic devices safety provided by DICE-based Muller C-elements

    Article • Acta Astronautica, January 2018, Elsevier

    Dr Maxim S Gorbunov

  4. New stage in high-energy gamma-ray studies with GAMMA-400 after Fermi-LAT

    Article • EPJ Web of Conferences, January 2017, EDP Sciences

    Dr Maxim S Gorbunov

  5. Design Trade-off Between Performance and Fault-Tolerance of Space Onboard Computers

    Article • Journal of Physics Conference Series, January 2017, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  6. High-energy gamma-ray studying with GAMMA-400 after Fermi-LAT

    Article • Journal of Physics Conference Series, January 2017, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  7. Layout-aware Soft Error Rate Estimation Technique for Integrated Circuits under the Environment with Energetic Charged Particles

    Article • Journal of Physics Conference Series, January 2017, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  8. Modifications of a method for low energy gamma-ray incident angle reconstruction in the GAMMA-400 gamma-ray telescope

    Article • Journal of Physics Conference Series, January 2017, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  9. Status of the scientific data acquisition system for the GAMMA-400 space telescope mission

    Article • Journal of Physics Conference Series, January 2017, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  10. Layout-aware simulation of soft errors in sub-100 nm integrated circuits

    Article • December 2016, SPIE

    Dr Maxim S Gorbunov

  11. Total ionizing dose effects modeling in common-gate tri-gate FinFETs using Verilog-A

    Article • December 2016, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  12. Semi-Empirical Method for Estimation of Single-Event Upset Cross Section for SRAM DICE Cells

    Article • IEEE Transactions on Nuclear Science, August 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  13. The structure of control and data transfer management system for the GAMMA-400 scientific complex

    Article • Journal of Physics Conference Series, February 2016, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  14. The scientific data acquisition system of the GAMMA-400 space project

    Article • Journal of Physics Conference Series, February 2016, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  15. The GAMMA-400 gamma-ray telescope for precision gamma-ray emission investigations

    Article • Journal of Physics Conference Series, February 2016, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  16. Perspectives of the GAMMA-400 space observatory for high-energy gamma rays and cosmic rays measurements

    Article • Journal of Physics Conference Series, February 2016, Institute of Physics Publishing

    Dr Maxim S Gorbunov

  17. Temperature Dependence of MCU Sensitivity in 65 nm CMOS SRAM

    Article • IEEE Transactions on Nuclear Science, December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  18. Separation of electrons and protons in the GAMMA-400 gamma-ray telescope

    Article • Advances in Space Research, October 2015, Elsevier

    Dr Maxim S Gorbunov

  19. Semi-Empirical Method for Estimation of Single-Event Upset Cross-Section for SRAM DICE Cells

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  20. Multiple Cell Upset Cross-Section Uncertainty in Nanoscale Memories: Microdosimetric Approach

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  21. The GAMMA-400 experiment: Status and prospects

    Article • Bulletin of the Russian Academy of Sciences Physics, March 2015, Allerton Press

    Dr Maxim S Gorbunov

  22. Statistics and methodology of multiple cell upset characterization under heavy ion irradiation

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, March 2015, Elsevier

    Dr Maxim S Gorbunov, Gennady Zebrev

  23. Space γ-observatory GAMMA-400 Current Status and Perspectives

    Article • Physics Procedia, January 2015, Elsevier

    Dr Maxim S Gorbunov

  24. Estimation technique for SET-tolerance of combinational ICs

    Article • December 2014, SPIE

    Dr Maxim S Gorbunov

  25. Radiation-induced mismatch enhancement in 65nm CMOS SRAM for space applications

    Article • December 2014, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  26. SET Tolerance of 65 nm CMOS Majority Voters: A Comparative Study

    Article • IEEE Transactions on Nuclear Science, August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  27. Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

    Article • IEEE Transactions on Nuclear Science, August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  28. Design of 65 nm CMOS SRAM for Space Applications: A Comparative Study

    Article • IEEE Transactions on Nuclear Science, August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  29. SET tolerance of 65 nm CMOS majority voters: A comparative study

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov

  30. Microdose induced drain leakage effects in power trench MOSFETs: Experiment and modeling

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  31. Design of 65 nm CMOS SRAM for space applications: A comparative study

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  32. Fault-Tolerant SOI Microprocessor for Space Applications

    Article • IEEE Transactions on Nuclear Science, August 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  33. Analysis of SOI CMOS Microprocessor's SEE Sensitivity: Correlation of the Results Obtained by Different Test Methods

    Article • IEEE Transactions on Nuclear Science, August 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  34. Analysis of SOI CMOS microprocessor's SEE sensitivity: Correlation of the results obtained by different test methods

    Article • September 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  35. Verilog-A Modeling of Radiation-Induced Mismatch Enhancement

    Article • IEEE Transactions on Nuclear Science, June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  36. Radiation-hardening-by-design with circuit-level modeling of total ionizing dose effects in modern CMOS technologies

    Article • October 2009, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  37. Modeling of Radiation-Induced Leakage and Low Dose-Rate Effects in Thick Edge Isolation of Modern MOSFETs

    Article • IEEE Transactions on Nuclear Science, August 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  38. Multi-scale modeling of low dose-rate total dose effects in advanced microelectronics

    Article • May 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev

  39. Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

    Article • March 2008, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  40. Parasitic bipolar effect in modern SOI CMOS technologies

    Article • March 2008, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  41. Compact physical modeling of fully depleted SOI MOSFET

    Article • May 2006, SPIE

    Dr Maxim S Gorbunov, Gennady Zebrev

  42. Diffusion-Drift Model of Fully Depleted SOI MOSFET

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Maxim S Gorbunov, Gennady Zebrev